Datasheet > 1N6279C

1N6279C

更新时间： 2024-11-22 04:46:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	119K
描述
POWER 1500Watts VOLTAGE 6.8 to 440 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6279C 数据手册

GALAXY ELECTRICAL

1N6267- - -1N6303A

BREAKDOWN VOLTAGE: 6.8 --- 200 V

PEAK PULSE POWER: 1500 W

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

DO-201AE

Glass passivated junction

1500W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.05%

Excellent clamping capability

Low incremental surge resistance

Fast response time: typically less than 1.0ps from 0 Volts to

V^(BR)for uni-directional and 5.0ns for bi-directional types

For devices with V(BR) 10V,ID are typically less than 1.0μA

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 51bs. (2.3kg) tension

MECHANICAL DATA

Case:JEDEC DO-201AE, molded plastic

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

Weight: 0.032 ounces, 0.9 grams

Mounting position: Any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_PPM

VALUE

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

Minimum 1500

SEE TABLE 1

I_PPM

Steady state pow er dissipation at T_L=75

ffffflead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

6.5

Peak forw ard surge current, 8.3ms single half

ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)

200.0

Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)

Typical thermal resistance junction-to-lead

V_F

R_θ_JL

3.5/5.0

Typical thermal resistance junction-to-ambient

R_θ_JA

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

www.galaxycn.com

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)200V, and V_F=5.0 Volt max. for devices of V_(BR)>200V

BLGALAXY ELECTRICAL

Document Number 0285011

12 3 4

中文翻译

下载PDF

与1N6279C相关器件

型号	品牌	获取价格	描述	数据表
1N6279CA	TRSYS	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1N6279CA	TSC	获取价格	Transient Voltage Suppressor Diodes
1N6279CA	EIC	获取价格	BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N6279CA	SYNSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
1N6279CA	GOOD-ARK	获取价格	Trans Voltage Suppressor Diode, 18.8V V(RWM), Bidirectional
1N6279CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18.8V V(RWM), Bidirectional, 1 Element, Silicon, RO
1N6279CA-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 1.5KE, 2 PIN, Tr
1N6279CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18.8V V(RWM), Bidirectional, 1 Element, Silicon, RO
1N6279CAHE3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PI
1N6279CAHE3/54	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transi

与1N6279C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

32
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

24
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

53
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

51

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6279C

1N6279C 数据手册

与1N6279C相关器件

与1N6279C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6279C

1N6279C 数据手册

与1N6279C相关器件

与1N6279C相关文章

您还可以找

您在本页遇到什么问题？