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1N6275A/4F-E3 PDF预览

1N6275A/4F-E3

更新时间： 2024-10-29 07:06:19
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
7页 170K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

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1N6275A/4F-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.47其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：15.8 V最小击穿电压：14.3 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT APPLICABLE极性：UNIDIRECTIONAL
最大功率耗散：6.5 W认证状态：Not Qualified
最大重复峰值反向电压：12.8 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT APPLICABLE

1N6275A/4F-E3 数据手册

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1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303  
Vishay Semiconductors  
TRANSZORB Transient Voltage Suppressors  
Major Ratings and Characteristics  
V(BR) Unidirectional  
6.8 V to 540 V  
6.8 v to 440 V  
1500 W  
V
(BR) Bidirectional  
PPPM  
PM(AV)  
6.5 W  
I
FSM (Unidirectional only)  
Tj max.  
200 A  
175 °C  
Case Style 1.5KE  
Features  
• Glass passivated chip junction  
• Available in Unidrectional and Bidirectional  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
Mechanical Data  
Case: Molded plastic body over passivated junction  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and MIL-STD-750, Method  
2026  
Polarity: For unidirectional types the color band  
denotes cathode end, no marking on bidirectional  
types  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020C  
• AEC-Q101 qualified  
Typical Applications  
Use in sensitive electronics protection against voltage  
Devices for bidirection Applications  
transients induced by inductive load switching and For bidirectional types, use C or CA suffix for types  
lighting on ICs, MOSFET, signal lines of sensor units (e.g. 1.5KE440CA).  
for consumer, computer, industrial, automotive, and  
Telecommunication  
Electrical characteristics apply in both directions.  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Limit  
1500  
Unit  
W
Peak pulse power dissipation with a 10/1000 µs waveform(1) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform(1)  
Steady state power dissipation lead lengths 0.375“ (9.5 mm)(2)  
TL = 75 °C  
IPPM  
See Next Table  
6.5  
A
PM(AV)  
W
,
Peak forward surge current 8.3 ms single half sine-wave unidirectional  
only(3)  
IFSM  
200  
A
Maximum instantaneous forward voltage at 100 A for unidirectional only(4)  
Operating junction and storage temperature range  
VF  
3.5/5.0  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5  
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(4) VF = 3.5 V for 1.5KE220(A) & below; VF = 5.0 V for 1.5KE250(A) & above  
Document Number 88301  
03-Mar-05  
www.vishay.com  
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与1N6275A/4F-E3相关器件

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275A/62-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275A/64 VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, P
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 		Trans Voltage Suppressor Diode, 1500W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, P

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