是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.36 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 3 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 56 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | TIN LEAD OVER COPPER | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV1N6163 | MICROSEMI |
功能相似 |
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JANTX1N6163 | MICROSEMI |
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BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6163 | MICROSEMI |
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BIDIRECTIONAL TRANSIENT SUPPRESSORS |
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