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1N6153AHRS PDF预览

1N6153AHRS

更新时间: 2024-11-09 13:03:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管
页数 文件大小 规格书
2页 110K
描述
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon,

1N6153AHRS 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.76
Is Samacsys:N其他特性:TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE, HIGH RELIABILITY
最小击穿电压:27 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-LALF-W2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N6153AHRS 数据手册

 浏览型号1N6153AHRS的Datasheet PDF文件第2页 

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