Datasheet > 1N60ZL-T92-B

1N60ZL-T92-B

更新时间： 2022-09-13 23:12:31

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友顺 - UTC		/
页数	文件大小	规格书
6页	245K
描述
1.2A, 600V N-CHANNEL POWER MOSFET

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1N60ZL-T92-B 数据手册

1N60Z

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

UNIT

Drain-Source Voltage

600

±20

Gate-Source Voltage

Avalanche Current (Note 2)

Continuous Drain Current

Pulsed Drain Current (Note 2)

1.2

I_D

1.2

I_DM

4.8

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

V/ns

Avalanche Energy

E_AR

4.0

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

TO-92

Power Dissipation (T_A=25℃)

P_D

TO-252

1.5

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

℃

T_OPR

T_STG

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 60mH, I_AS= 1A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

4. I_SD≤ 1.2A, di/dt ≤ 200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

140

UNIT

TO-92

Junction to Ambient

θ_JA

℃/W

TO-252

100

ELECTRICAL CHARACTERISTICS (T_C=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

600

μA

V_DS=600V, V_GS=0V

-5

Forward

Reverse

V_GS=20V, V_DS=0V

μA

Gate-Source Leakage Current

I_GSS

V_GS=-20V, V_DS=0V

μA

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JI_D=250μA

0.4

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

2.0

4.0

V_GS=10V, I_D=0.6A

9.3 11.5

Ω

C_ISS

C_OSS

C_RSS

120 150

Output Capacitance

V_DS=25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

3.0

4.0

t_D(ON)

t_R

t_D(OFF)

t_F

6.0

Turn-On Rise Time

V_DD=300V, I_D=1.2A, R_G=50Ω

(Note 2,3)

Turn-Off Delay Time

Turn-Off Fall Time

5.0

1.0

2.6

Total Gate Charge

Q_G

V_DS=480V, V_GS=10V,

Gate-Source Charge

Q_GS

Q_GD

I_D=1.2A (Note 2,3)

Gate-Drain Charge

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-724.C

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