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1N6070AE3TR PDF预览

1N6070AE3TR

更新时间: 2024-11-29 18:53:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 492K
描述
Trans Voltage Suppressor Diode, 1500W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

1N6070AE3TR 技术参数

生命周期:Active包装说明:O-MALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.73
最大击穿电压:200 V最小击穿电压:181 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-202AAJESD-30 代码:O-MALF-W2
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL最大功率耗散:1 W
最大重复峰值反向电压:160 V表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N6070AE3TR 数据手册

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