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1N6046AE3 PDF预览

1N6046AE3

更新时间: 2024-11-20 20:50:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 205K
描述
Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

1N6046AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-MALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.38
最大击穿电压:21 V最小击穿电压:19 V
击穿电压标称值:20 V外壳连接:ISOLATED
最大钳位电压:27.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-202AAJESD-30 代码:O-MALF-W2
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1 W最大重复峰值反向电压:17 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6046AE3 数据手册

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