Datasheet > 1N5939B

1N5939B

更新时间： 2024-11-02 12:51:51

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		稳压二极管测试
页数	文件大小	规格书
3页	451K
描述
GLAS S PASSIVA TED JUNC TION S ILICON ZENER DIODE VO LTA GE - 1 1 T O 200 Vo lts

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1N5939B 数据手册

1N5926B THRU 1N5956B

星合子

XINGHE ELECTRONICS

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts

Power - 1.5 Watts

FEATURES

DO-41

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Typical I_Rless than 1 £gA above 11V

High temperature soldering :

260 ¢J/10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-41 Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

method 2026

Polarity: Color band denotes positive end (cathode)

Standard Packaging: 52mm tape

Weight: 0.012 ounce, 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ¢J ambient temperature unless otherwise specified.

SYMBOL

VALUE

1.5

UNITS

Watts

¢J

P_D

DC Power Dissipation @ T_L=75 , Measure at Zero Lead Length(Note 1, Fig. 1)

mW/¢J

Derate above 75 ¢J

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated

load(JEDEC Method) (Note 1,2)

I_FSM

Amps

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

¢J

NOTES:

1. Mounted on 5.0mm²(.013mm thick) land areas.

2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses

per minute maximum.

3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device

function in thermal equilibrium with ambient temperature at 25 ¢J.

4.ZENER IMPEDANCE (Zz) DERIVATION Z_ZTare measured by dividing the ac voltage drop across

the device by the accurrent applied. The specified limits are for I_Z(ac)= 0.1 I_Z, (dc) with the ac freqency = 60Hz.

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

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