1N5931BP-AP

更新时间： 2024-12-01 12:58:15

品牌	Logo	应用领域
美微科 - MCC		二极管齐纳二极管测试
页数	文件大小	规格书
4页	125K
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中文翻译

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数据手册

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1N5931BP-AP 数据手册

1N5926B

THRU

1N5956B

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

1.5 Watt

Zener Diode

11 to 200 Volts

Glass Passivated Junction

Low Profile Package

Low Inductance

Built-in Strain Relief

DO-41G

Maximum Ratings & Thermal Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Forward Voltage

at I^F=200mA

V^F

1.5

Power

Dissipation at

T_L= 75°C

1.5⁽¹⁾

P_tot

Cathode

Mark

Pwak forward

Surge Current

8.3ms single half

sine/square wave

Junction

I _FSM

Amps

-55 ~ +150

^oC

Temperature

Storage

DIMENSIONS

INCHES

MIN

M M

Temperature

Range

T_STG

DIM

NOTE

MAX

0.205

0.107

0.034

-----

MIN

4.10

MAX

7.60

3.60

0.90

-----

0.166

0.080

0.026

1.000

2.00

Diameter

0.70

25.40

www.mccsemi.com

12 3 4

中文翻译

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