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1N5821 PDF预览

1N5821

更新时间: 2024-10-31 14:53:47
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 779K
描述
DO-27

1N5821 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
DO-27 Plastic-Encapsulate Diodes  
Schottky Rectifier Diodes  
Features  
● IF(AV)  
3A  
DO-27  
● VRRM  
20V-40V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
● Rectifier  
Marking  
1N582X  
:
X
From 0 To 2  
1N58  
21  
Item  
Symbol  
Unit  
Conditions  
20  
22  
VRRM  
VRMS  
VDC  
V
V
V
20  
30  
40  
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
14  
20  
21  
30  
28  
40  
MaximumDC Blocking Voltage  
60HZ Half-sine wave,  
Resistance load,T L=95)  
IF(AV)  
A
A
3.0  
80  
Average Forward Current  
60Hz Half-sine wave ,  
1 cycle , Ta =25  
Surge(Non-repetitive)Forward  
Current  
IFSM  
TJ  
-55 ~ +125  
-55 ~ +150  
Junction Temperature  
Storage Temperature  
TSTG  
Electrical Characteristics (T=25Unless otherwise specified  
1N58  
21  
Item  
Symbol Unit  
Test Condition  
20  
22  
MaximumPeak Forward Voltage  
0.525  
VFM  
IFM=3.0A  
V
mA  
pF  
0.5  
0.475  
IRRM1  
IRRM2  
T =25  
1.0  
10  
J
Maximum Peak Reverse Current  
Typical junction capacitance  
VRM=VRRM  
T =125℃  
J
Measured at 1MHz and applied  
reverse voltage of 4.0V D.C.  
300  
40  
CJ  
Rθ  
Between junction and ambient  
Between junction and lead  
J-A  
Typical Thermal Resistance  
/W  
Rθ  
20  
J-L  
Notes:  
1)  
Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted  
Rev. - 1.0  
1
www.jscj-elec.com  

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