Datasheet > 1N5821

1N5821

更新时间： 2024-10-15 14:47:15

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1057K
描述
肖特基二极管

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中文翻译

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技术参数
数据手册

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1N5821 技术参数

Case Style：	DO-27	IF（A）：	3
Maximum recurrent peak reverse voltage：	30	Peak forward surge current：	80
Maximum instantaneous forward voltage：	0.55	@IF(A)：	3
Maximum reverse current：	2	TJ(℃）：	/
class：	Diodes

1N5821 数据手册

1N5820-1N5822

3.0 AMP. Schottky Barrier Rectifiers

DO-201AD

Features

ꢀ

Low power loss, high efficiency.

High current capability, Low VF.

High reliability

High surge current capability.

Epitaxial construction.

Guard-ring for transient protection.

For use in low voltage, high frequency

inventor, free wheeling, and polarity protection

application.

Mechanical Data

ꢀ

Cases: DO-201AD molded plastic

Dimensions in inches and (millimeters)

Epoxy: UL 94V-0 rate flame retardant

ꢀ

Polarity: Color band denotes cathode end

High temperature soldering guaranteed:

260 C/10 seconds/.375”,(9.5mm) lead

lengths at 5 lbs., (2.3kg) tension

ꢀ

Weight: 1.2 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Units

Type Number

1N5820

1N5821

1N5822

Maximum Recurrent Peak Reverse Voltage

V_RRM

V_RMS

V_DC

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375 (9.5mm) Lead Length @T_L= 90℃

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

3.0

I_(AV)

I_FSM

Maximum Instantaneous Forward Voltage @ 3.0A

Maximum Instantaneous Forward Voltage @ 9.0A

0.475

0.850

0.500

0.900

0.525

0.950

V_F

Maximum DC Reverse Current @ T_A=25 C

0.5

I_R

at Rated DC Blocking Voltage @ T =100 C

Typical Junction Capacitance (Note 2)

200

Typical Thermal Resistance (Note 1)

Operating Temperature Range

Storage Temperature Range

C/W

θJA

T_J

-65 to +125

T_STG

Notes:

1. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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与1N5821相关器件

型号	品牌	获取价格	描述	数据表
1N5821/4-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/4F-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/4H-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/62	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/64	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/64-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/65	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/66	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/70	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC

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