Datasheet > 1N5817

1N5817

更新时间： 2024-11-17 22:37:39

品牌	Logo	应用领域
智威 - ZOWIE		/
页数	文件大小	规格书
2页	50K
描述
SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5817 数据手册

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 1.0 Ampere

DO-204AL

FEATURES

* The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

* Metal silicon junction, majority carrier conduction

* Guardring for overvoltage protection

* Low power loss, high efficiency

* High current capability, low forward voltage drop

* High surge capability

0.107(2.7)

0.080(2.0)

DIA.

* For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

* High temperature soldering guaranteed :

260^oC / 10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

Case : JEDEC DO-204AL Molded plastic body

Terminals : Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.034(0.86)

0.028(0.71)

DIA.

Polarity : Color band denotes cathode end

Mounting Position : Any

Weight : 0.012 ounce, 0.3 gram

*Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature

SYMBOLS

1N5817

1N5818

1N5819

UNITS

unless otherwise specified.

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at TL=90^oC

I(AV)

IFSM

1.0

Amps

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0 A

Maximum instantaneous forward voltage at 3.1 A

0.450

0.750

0.550

0.875

0.600

0.900

Volts

Maximum instantaneous reverse

current at rated DC reverse voltage

TA=25^oC

TA=100^oC

1.0

10.0

Typical junction capacitance ( NOTE 1 )

Typical thermal resistance ( NOTE 2 )

110

^oC / W

^oC

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to lead, and/or to ambient P.C.B. mounted with 0.375" (9.5mm) length with 1.5 x 1.5" (38 x 38mm) copper pads

Zowie Technology Corporation

REV. : 0

中文翻译

下载PDF

与1N5817相关器件

型号	品牌	获取价格	描述	数据表
1N5817/1	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/100	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4F	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4G	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/53	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819	ETC	获取价格	Schottky barrier diodes

与1N5817相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5817

1N5817 数据手册

与1N5817相关器件

与1N5817相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5817

1N5817 数据手册

与1N5817相关器件

与1N5817相关文章

您还可以找

您在本页遇到什么问题？