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1N5817 PDF预览

1N5817

更新时间： 2024-01-05 04:55:29
品牌 Logo 应用领域
CTC /
页数 文件大小 规格书
2页 40K
描述
SCHOTTKY BARRIER RECTIFIERS

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中文翻译

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1N5817 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.75Base Number Matches：1

1N5817 数据手册

 浏览型号1N5817的Datasheet PDF文件第2页 
Compact Technology  
1N5817 thru 1N5819  
20 40  
to  
REVERSE VOLTAGE -  
FORWARD CURRENT -  
Volts  
SCHOTTKY BARRIER RECTIFIERS  
1.0  
Ampere  
DO-41  
FEATURES  
Metal-Semiconductor junction with guard ring  
A
A
B
Epitaxial construction  
Low forward voltage drop  
C
High current capability  
The plastic material carries UL recognition 94V-0  
D
For use in low voltage,high frequency inverters,free  
wheeling,and polarity protection applications  
DO-41  
MECHANICAL DATA  
Min.  
25.4  
4.20  
0.70  
2.00  
Max.  
-
Dim.  
A
Case : JEDEC DO-41 molded plastic  
Polarity : Color band denotes cathode  
Weight : 0.012 ounces, 0.34 grams  
Mounting position : Any  
5.20  
0.90  
2.70  
B
C
D
All Dimensions in millimeter  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
̺
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
CHARACTERISTICS  
SYMBOL  
1N5817  
1N5818  
1N5819  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
RRM  
RMS  
V
V
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward  
V
DC  
(AV)  
I
A
@T  
A=  
90 C  
1.0  
Rectified Current  
Peak Forward Surge Current  
8.3ms single half sine-wave  
super imposed on rated load (JEDEC Method)  
Maximum forward Voltage at 1.0A DC  
Maximum forward Voltage at 3.0A DC  
A
I
FSM  
25  
V
V
V
F
F
0.450  
0.750  
0.550  
0.875  
0.600  
0.900  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
A
=25 C  
mA  
mA  
1.0  
10  
R
I
@TA  
=100 C  
Typical Junction Capacitance (Note 1)  
pF  
C
J
110  
50  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
C/W  
R
0JA  
C
C
T
J
-55 to +125  
-55 to +150  
T
STG  
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Thermal Resistance Junction to Ambient.  
CTC0072 Ver. 2.0  
1 of 2  
1N5817 thru 1N5819  
12

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与1N5817相关器件

型号 品牌 获取价格 描述 数据表
1N5817/1 VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/100 VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4E VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4F VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4G VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4H VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/53 VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56 VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58 VISHAY

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 		Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819 ETC

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 		Schottky barrier diodes

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