Datasheet > 1N5711UR-1_10

1N5711UR-1_10

更新时间： 2022-09-13 22:07:34

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
3页	79K
描述
SCHOTTKY BARRIER DIODES

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1N5711UR-1_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PACKAGE DIMENSIONS

NOTE:

Dimensions

1. Dimensions are in inches. Millimeters are given for general

information only.

2. In accordance with ASME Y14.5M, diameters are equivalent to Φx

symbology.

Symbol

Inches

Millimeters

Notes

Min

Max

.067

.146

.022

Min

1.60

3.30

0.41

Max

1.70

3.71

0.55

ECT

.063

.130

.016

.001 Min

DESIGN DATA

CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34)

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (R_θJEC): 100°C/W maximum at L = 0 inch

THERMAL IMPEDANCE: (Z_θJX): 40°C/W maximum.

POLARITY: Cathode end is banded.

MOUNTING POSITION SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C.

The COE of the Mounting Surface System should be selected to provide a suitable match with this device.

T4-LDS-0041 Rev. 1 (100246)

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