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1N5704B PDF预览

1N5704B

更新时间: 2024-02-05 17:39:42
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 61K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 65V, Silicon, Abrupt, DO-7,

1N5704B 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
最小击穿电压:65 V外壳连接:ISOLATED
配置:SINGLE二极管电容容差:5%
最小二极管电容比:3.2标称二极管电容:33 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JEDEC-95代码:DO-7JESD-30 代码:O-LALF-W2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.4 W
认证状态:Not Qualified最小质量因数:350
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED变容二极管分类:ABRUPT
Base Number Matches:1

1N5704B 数据手册

  

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