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1N5620GP-E3/4E PDF预览

1N5620GP-E3/4E

更新时间: 2024-02-03 20:50:41
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 292K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

1N5620GP-E3/4E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-15
包装说明:PLASTIC, DO-15, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:2 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLE

1N5620GP-E3/4E 数据手册

 浏览型号1N5620GP-E3/4E的Datasheet PDF文件第1页浏览型号1N5620GP-E3/4E的Datasheet PDF文件第3页浏览型号1N5620GP-E3/4E的Datasheet PDF文件第4页 
1N5614GP thru 1N5622GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
at 50 µA  
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP  
Unit  
V
* Minimum reverse  
breakdown voltage  
VBR  
VF  
IR  
220  
440  
660  
880  
1100  
* Maximum instantaneous at 1.0 A  
forward voltage  
1.2  
V
* Maximum DC reverse  
current at rated DC  
blocking voltage  
TA = 25 °C  
0.5  
25  
µA  
TA =100°C  
* Maximum reverse  
recovery time  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
2.0  
25  
µs  
pF  
Maximum junction  
capacitance  
at 12 V, 1 MHz  
CJ  
45  
35  
20  
15  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Notes:  
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N522GP  
RθJA 45  
Unit  
°C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.75  
0.5  
50  
40  
30  
60 Hz  
Resistive or  
Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
20  
10  
0.25  
0
0.375” (9.5 mm) Lead Length  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature, °C  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88520  
14-Oct-05  

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