5秒后页面跳转
1N5620US PDF预览

1N5620US

更新时间: 2024-09-24 12:50:11
品牌 Logo 应用领域
SENSITRON 整流二极管局域网
页数 文件大小 规格书
3页 54K
描述
HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER

1N5620US 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:MELF
包装说明:HERMETIC SEALED, GLASS, MELF-A, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.36
Is Samacsys:N其他特性:HIGH RELIABILITY, METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:E-LELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:2 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5620US 数据手册

 浏览型号1N5620US的Datasheet PDF文件第2页浏览型号1N5620US的Datasheet PDF文件第3页 
1N5614/US  
1N5616/US  
1N5618/US  
1N5620/US  
1N5622/US  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 116, REV. C  
SS  
HERMETIC AXIAL LEAD / MELF  
GENERAL PURPOSE RECTIFIER  
DESCRIPTION: A 200/400/600/800/1000 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT  
2000 NS GLASS RECTIFIER.  
MAXIMUM RATINGS  
RATING  
All ratings are at TA = 25oC unless otherwise specified.  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Peak Inverse Voltage  
(PIV)  
-
-
Vdc  
1N5614  
1N5616  
1N5618  
1N5620  
200  
400  
600  
800  
1000  
1N5622  
Average DC Output  
Current (Io) TC = 55 °C  
TC = 100 °C  
-
-
-
-
Amps  
1.0  
0.75  
Peak Single Cycle Surge  
tp = 8.3 ms Single  
Half Cycle Sine  
Wave,  
30  
Amps(pk)  
Current (Ifsm  
)
Superimposed On  
Rated Load  
Junction to Lead  
d = 0.375”  
-
-
36  
Thermal Resistance (θJL)  
°C/W  
Junction to Endcap  
-
-
-
-
13  
Thermal Resistance (θJEC  
)
°C/W  
°C  
Operating and Storage  
Temp. (Top & Tstg)  
-65  
+175  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Maximum Forward  
Voltage (Vf)  
-
-
1.3  
Volts  
IF = 3.0A (300 μsec  
pulse, duty cycle <  
2%)  
Maximum Instantaneous  
Reverse Current At Rated  
(PIV)  
-
-
-
-
0.5  
25  
TA = 25° C  
TA = 100° C  
μAmps  
μAmps  
Maximum Reverse  
Recovery Time  
IF = 0.5A, IR = 1.0A  
2000  
ns  
IRR = 0.25A  
©1997 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

1N5620US 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N5620US SENSITRON

完全替代

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-A, 2 PI
1N5620UL SENSITRON

功能相似

HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER

与1N5620US相关器件

型号 品牌 获取价格 描述 数据表
1N5620USS VMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon,
1N5620V SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, Silicon
1N5621 MICROSEMI

获取价格

MILITARY RECTIFIERS
1N5621 VISHAY

获取价格

GLASS PASSIVATED FAST SWITCHING RECTIFIER
1N5621 SENSITRON

获取价格

Fast Recovery Rectifier
1N5621 SEMTECH

获取价格

RECTIFIER, up to 1kV, 2A, 150-500ns
1N5621 NJSEMI

获取价格

Diode Switching 800V 2A 2-Pin Case G-2
1N5621 CENTRAL

获取价格

1A,800V Through-Hole Rectifier-Fast Recovery <500ns Single
1N5621A NJSEMI

获取价格

Diode Switching 800V 2A 2-Pin Case G-2
1N5621GP VISHAY

获取价格

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER