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1N5621GP/68-E3 PDF预览

1N5621GP/68-E3

更新时间： 2024-11-26 10:50:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 324K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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1N5621GP/68-E3 数据手册

 浏览型号1N5621GP/68-E3的Datasheet PDF文件第2页浏览型号1N5621GP/68-E3的Datasheet PDF文件第3页浏览型号1N5621GP/68-E3的Datasheet PDF文件第4页 
1N5615GP thru 1N5623GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
200 V to 1000 V  
50 A  
150 ns, 250 ns, 300 ns, 500 ns  
IR  
0.5 µA  
1.2 V  
*
d
e
t
VF  
n
e
t
a
Tj max.  
175 °C  
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP  
Units  
V
Maximum repetitive peak reverse voltage  
VRRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
V
V
A
A
Maximum DC blocking voltage  
VDC  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
IFSM  
50  
A
Operating junction and storage  
temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88522  
19-Sep-05  
www.vishay.com  
1
1234

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与1N5621GP/68-E3相关器件

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 		DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5621GP-E3 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, LEAD FREE, PLASTIC, DO-15,
1N5621GP-E3/4G VISHAY

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 		DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5621GP-E3/72 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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