Datasheet > 1N5616GP-E3/65

1N5616GP-E3/65

更新时间： 2024-11-22 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	292K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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1N5616GP-E3/65 数据手册

1N5614GP thru 1N5622GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1.0 A

200 V to 1000 V

50 A

0.5 µA

V_F

1.2 V

T_jmax.

175 °C

DO-204AC (DO-15)

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current, I less than 0.1 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP Unit

* Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

1.0

800

560

800

1000

700

Maximum RMS voltage

* Maximum DC blocking voltage

1000

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 55 °C

I_F(AV)

* Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

* Operating junction temperature range

* Storage temperature range

T_J

- 65 to + 175

°C

T_STG

Document Number 88520

14-Oct-05

www.vishay.com

12 3 4

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