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1N5616GPPHE3/54 PDF预览

1N5616GPPHE3/54

更新时间: 2024-11-21 14:39:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 70K
描述
Rectifier Diode,

1N5616GPPHE3/54 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

1N5616GPPHE3/54 数据手册

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1N5614GP thru 1N5622GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
DO-204AC (DO-15)  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current, IR less than 0.1 μA  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
200 V to 1000 V  
50 A  
Case: DO-204AC, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
0.5 μA  
VF  
1.2 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT  
(1)  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRMS  
(1)  
Maximum DC blocking voltage  
VDC  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
1.0  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
(1)  
IFSM  
50  
A
(1)  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Note  
(1)  
JEDEC registered values  
Document Number: 88520  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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