Datasheet > 1N5615_07

1N5615_07

更新时间： 2024-11-06 03:54:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管快速恢复二极管
页数	文件大小	规格书
3页	175K
描述
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

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1N5615_07 数据手册

1N5615 thru 1N5623

VOIDLESS-HERMETICALLY SEALED

FAST RECOVERY GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429

and is ideal for high-reliability applications where a failure cannot be tolerated.

These industry-recognized 1.0 Amp rated rectifiers for working peak reverse

voltages from 200 to 1000 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. These devices are

also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including fast and ultrafast device

types in both through-hole and surface mount packages.

“A” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N5615 to 1N5623 series

Voidless hermetically sealed glass package

Triple-Layer Passivation

•

Fast recovery 1 Amp rectifiers 200 to 1000 V

Military and other high-reliability applications

General rectifier applications including bridges, half-

bridges, catch diodes, etc.

High forward surge current capability

Extremely robust construction

Internal “Category I” Metallurgical bonds

Working Peak Reverse Voltage 200 to 1000 Volts.

•

JAN, JANTX, JANTXV, and JANS available per MIL-

PRF-19500/429

Low thermal resistance

•

Controlled avalanche with peak reverse power

capability

•

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N5615US thru 1N5623US)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction & Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs (package dimensions on last page)

Thermal Resistance: 38^oC/W junction to lead at 3/8

inch (10 mm) lead length from body

Thermal Impedance: 4.5^oC/W @ 10 ms heating time

TERMINATIONS: Axial leads are copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver axial-leads and no finish.

•

Average Rectified Forward Current (I_O): 1.0 Amps @

T_A= 55ºC

•

MARKING: Body paint and part number, etc.

POLARITY: Cathode band

•

Forward Surge Current: 30 Amps @ 8.3 ms half-sine

Solder Temperatures: 260ºC for 10 s (maximum)

TAPE & REEL option: Standard per EIA-296

WEIGHT: 340 mg

ELECTRICAL CHARACTERISTICS

WORKING

PEAK

MINIMUM

BREAKDOWN

VOLTAGE

AVERAGE

RECTIFIED

CURRENT

I_O@ T_A

FORWAR

VOLTAGE

(MAX.)

V_F@ 3A

REVERSE

CURRENT

(MAX.)

CAPACITANCE MAXIMUM

REVERSE

RECOVERY

(MAX.)

(NOTE 3)

t_rr

(MAX.)

C @ V_R=12 V

f=1 MHz

SURGE

CURRENT

I_FSM

REVERSE

VOLTAGE

V_RWM

TYPE

V_BR@ 50μA

I_R@ V_RWM

(NOTE 1)

(NOTE 2)

AMPS

VOLTS

AMPS

VOLTS

μA

50^oC 100^oC

25^oC 100^oC

1N5615

1N5617

1N5619

1N5621

1N5623

200

400

600

800

1000

220

440

660

880

1100

1.00

.750

.8 MIN.

150

250

300

500

1.6

MAX.

NOTE 1: From 1 Amp at T_A= 55^oC, derate linearly at 5.56 mA/ ^oC to 0.75 Amp at T_A= 100^oC. From T_A= 100^oC,

derate linearly at 7.5 mA/^oC to 0 Amps at T_A= 200 ^oC. These ambient ratings are for PC boards where thermal

resistance from mounting point to ambient is sufficiently controlled where T_J(max)does not exceed 175 ^oC.

NOTE 2: T_A= 100 ^oC, f = 60 Hz, I_O= 750 mA for ten 8.3 ms surges @ 1 minute intervals

NOTE 3: I_F= 0.5 A, I_RM= 1 A, I_R(REC)= 0.250 A

1-15-2007 REV D

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N5615_07相关器件

型号	品牌	获取价格	描述	数据表
1N5615BK	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon
1N5615GP	VISHAY	获取价格	GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
1N5615GP	NJSEMI	获取价格	Diode Switching 200V 1A 2-Pin DO-15
1N5615GP/100-E3	VISHAY	获取价格	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5615GP/4E-E3	VISHAY	获取价格	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5615GP/4F-E3	VISHAY	获取价格	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5615GP/4H-E3	VISHAY	获取价格	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5615GP/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5615GP/51-E3	VISHAY	获取价格	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5615GP/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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