5秒后页面跳转
1N5614C PDF预览

1N5614C

更新时间: 2024-09-16 01:18:59
品牌 Logo 应用领域
商升特 - SEMTECH /
页数 文件大小 规格书
4页 178K
描述
200V-1000V Axial Leaded Fast Avalanche Rectifier Diode

1N5614C 数据手册

 浏览型号1N5614C的Datasheet PDF文件第2页浏览型号1N5614C的Datasheet PDF文件第3页浏览型号1N5614C的Datasheet PDF文件第4页 
1N5614C THRU 1N5622C  
200V-1000V Axial Leaded  
Fast Avalanche Rectifier Diode  
HIGH-RELIABILITY PRODUCTS  
Features  
Quick Reference Data  
V
I
= 200V to 1000V  
= 0.5µA  
‹
‹
‹
‹
‹
Low reverse leakage current  
Hermetically sealed  
Good thermal shock resistance  
Fast Trr  
R
R
Trr = 3.0μs  
= 1.2V at I = 1A  
V
F
F
Low forward voltage drop  
Absolute Maximum Ratings  
Electrical specifications @ TA = 25oC unless otherwise specified.  
1N5614C  
1N5616C  
1N5618C  
1N5620C  
1N5622C  
Parameter  
Maximum Reccurrent Peak Reverse Voltage  
Maximum DC blocking Voltage  
Units  
V
200  
200  
400  
400  
600  
600  
800  
800  
1000  
1000  
V
V
RRM  
V
DC  
Maximum Average Forward Rectified Current  
o
A
0.375(9.5mm) lead length at T =55 C  
A
I
1.0  
F(av)  
Peak Forward Surge Current 8.3ms single Half  
sinewave superimposed on rated load  
50.0  
A
V
I
FSM  
Maximum Instantaneous Forward Voltage at  
1.0A  
V
1.2  
F
o
o
Maximum DC Reverse Current T =25 C  
A
I
0.5  
25  
μA  
R
at rated DC blocking voltage T =100 C  
A
(1)  
Maximum Reverse Recovery Time  
Trr  
C
3.0  
45.0  
μs  
pF  
V
(2)  
Typical Junction Capacitance  
Maximum Reverse Breakdowm Voltage I =50 μA  
R
V
220  
440  
660  
880  
1100  
BR  
(3)  
o
Typical Thermal Resistance  
R
55.0  
C/W  
θJL  
o
C
Storage and Operating Juntion Temperature  
T
,
-65 to +175  
STG  
J
T
Note:  
1. Reverse Recovery Condition I =0.5A, I =1.0A, I =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 12Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length.  
F
R
RR  
1N5614C THRU 1N5622C  
Final Datasheet  
14/08/2017  
1 of 4  
www.semtech.com  
Rev 1.0  

与1N5614C相关器件

型号 品牌 获取价格 描述 数据表
1N5614C-TR SEMTECH

获取价格

200V-1000V Axial Leaded Fast Avalanche Rectifier Diode
1N5614GP VISHAY

获取价格

Glass Passivated Junction Rectifier
1N5614GP/4E VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5614GP/4F-E3 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5614GP/4H VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5614GP/51 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5614GP/53 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5614GP/53-E3 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5614GP/54-E3 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5614GP/56-E3 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode