Datasheet > 1N5614C-TR

1N5614C-TR

更新时间： 2024-12-02 01:18:59

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商升特 - SEMTECH		/
页数	文件大小	规格书
4页	178K
描述
200V-1000V Axial Leaded Fast Avalanche Rectifier Diode

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中文翻译

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数据手册

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1N5614C-TR 数据手册

1N5614C THRU 1N5622C

200V-1000V Axial Leaded

Fast Avalanche Rectiﬁer Diode

HIGH-RELIABILITY PRODUCTS

Features

Quick Reference Data

= 200V to 1000V

= 0.5µA

Low reverse leakage current

Hermetically sealed

Good thermal shock resistance

Fast Trr

Trr = 3.0μs

= 1.2V at I = 1A

Low forward voltage drop

Absolute Maximum Ratings

Electrical speciﬁcations @ T_A= 25^oC unless otherwise speciﬁed.

1N5614C

1N5616C

1N5618C

1N5620C

1N5622C

Parameter

Maximum Reccurrent Peak Reverse Voltage

Maximum DC blocking Voltage

Units

200

400

600

800

1000

RRM

Maximum Average Forward Rectiﬁed Current

0.375”(9.5mm) lead length at T =55 C

1.0

F(av)

Peak Forward Surge Current 8.3ms single Half

sinewave superimposed on rated load

50.0

FSM

Maximum Instantaneous Forward Voltage at

1.0A

1.2

Maximum DC Reverse Current T =25 C

0.5

μA

at rated DC blocking voltage T =100 C

(1)

Maximum Reverse Recovery Time

Trr

3.0

45.0

μs

(2)

Typical Junction Capacitance

Maximum Reverse Breakdowm Voltage I =50 μA

220

440

660

880

1100

(3)

Typical Thermal Resistance

55.0

C/W

θJL

Storage and Operating Juntion Temperature

-65 to +175

STG

Note:

1. Reverse Recovery Condition I =0.5A, I =1.0A, I =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 12Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length.

1N5614C THRU 1N5622C

Final Datasheet

14/08/2017

1 of 4

www.semtech.com

Rev 1.0

12 3 4

中文翻译

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