是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-35 |
包装说明: | O-LALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.46 |
其他特性: | METALLURGICAL BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | 最大动态阻抗: | 30 Ω |
JEDEC-95代码: | DO-35 | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 0.5 W |
认证状态: | Not Qualified | 标称参考电压: | 6.2 V |
子类别: | Voltage Reference Diodes | 表面贴装: | NO |
技术: | ZENER | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 最大电压容差: | 10% |
工作测试电流: | 1 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5525A-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GL | |
1N5525A-1E3TR | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERM | |
1N5525A-1TR | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GL | |
1N5525ACO | AEROFLEX |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, Silicon, Unidirectional, DIE-1 | |
1N5525AD7 | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, 0.4W, Silicon, Unidirectional | |
1N5525AD7E3 | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, 0.4W, Silicon, Unidirectional, | |
1N5525ALEADFREE | CENTRAL |
获取价格 |
Zener Diode, 6.2V V(Z), 10%, 0.4W, Silicon, Unidirectional, DO-35, | |
1N5525ATR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5525AUR | MICROSEMI |
获取价格 |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | |
1N5525AUR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes |