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1N5407GP-E3/54 PDF预览

1N5407GP-E3/54

更新时间: 2024-11-27 14:46:07
品牌 Logo 应用领域
威世 - VISHAY 高压二极管
页数 文件大小 规格书
5页 85K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,

1N5407GP-E3/54 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:16 weeks
风险等级:5.59其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:HIGH VOLTAGE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
最大重复峰值反向电压:800 V最大反向电流:5 µA
最大反向恢复时间:5 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

1N5407GP-E3/54 数据手册

 浏览型号1N5407GP-E3/54的Datasheet PDF文件第2页浏览型号1N5407GP-E3/54的Datasheet PDF文件第3页浏览型号1N5407GP-E3/54的Datasheet PDF文件第4页浏览型号1N5407GP-E3/54的Datasheet PDF文件第5页 
1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-204AL (DO-41)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
I
FSM (8.3 ms sine-wave)  
30 A  
45 A  
Case: DO-204AL (DO-41), molded epoxy over glass body  
IFSM (square wave tp = 1 ms)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IR  
VF  
5.0 μA  
1.1 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
175 °C  
Package  
Diode variations  
DO-204AL (DO-41)  
Single die  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
(1)  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
(1)  
Maximum DC blocking voltage  
Maximum average forward rectified  
current 0.375" (9.5 mm) lead lengthIF(AV)  
at TA = 75 °C  
100  
1000  
(1)  
1.0  
30  
A
A
Peak forward surge current 8.3 ms  
single half sine-wave  
superimposed on rated load  
(1)  
(1)  
(1)  
IFSM  
IFSM  
IR(AV)  
Non-repetitive peak  
forward surge current   
square waveform  
TA = 25 °C (fig. 3)  
tp = 1 ms  
45  
35  
30  
tp = 2 ms  
tp = 5 ms  
A
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length TA = 75 °C  
30  
μA  
Rating for fusing (t < 8.3 ms)  
I2t (2)  
3.7  
A2s  
°C  
Operating junction and  
storage temperature range  
(1)  
TJ, TSTG  
-65 to +175  
Notes  
(1)  
JEDEC® registered values  
For device using on bridge rectifier application  
(2)  
Revision: 07-Nov-16  
Document Number: 88504  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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