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1N5403G-E PDF预览

1N5403G-E

更新时间: 2024-01-25 12:06:35
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管
页数 文件大小 规格书
2页 112K
描述
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A

1N5403G-E 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.91JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

1N5403G-E 数据手册

 浏览型号1N5403G-E的Datasheet PDF文件第2页 
1N5400G-E THRU 1N5408G-E  
GLASS PASSIVATED  
JUNCTION RECTIFIER  
VOLTAGE: 50V to 1000V  
CURRENT: 3.0A  
DO - 201AD  
FEATURE  
Molded case feature for auto insertion  
High current capability  
Low leakage current  
High surge capability  
High temperature soldering guaranteed  
250°C /10sec/0.375" lead length at 5 lbs tension  
Glass Passivated chip  
Halogen Free  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 Halogen Free Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
540  
G-  
540 540 540 540 540 540 540 540  
0G- 1G- 2G- 3G- 4G- 5G- 6G- 7G-  
SYMBOL  
units  
E
E
E
E
E
E
E
E
E
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
50  
100 200 300 400 500 600 800 1000  
70 140 210 280 350 420 560 700  
V
V
V
35  
50  
Maximum DC blocking Voltage  
100 200 300 400 500 600 800 1000  
3.0  
Maximum Average Forward Rectified Current  
3/8" lead length at TL =105°C  
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current  
If(av)  
Ifsm  
Vf  
A
A
180  
1.1  
V
Maximum full load reverse current full cycle at  
TL =75°C  
Ir(av)  
30.0  
µA  
5.0  
100.0  
40  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =125°C  
Ir  
µA  
Typical Junction Capacitance  
Operating Temperature  
(Note 1)  
(Note 2)  
Cj  
pF  
°C/W  
°C  
Rth(ja)  
Tstg, Tj  
30  
Storage and Operating Junction Temperature  
Note:  
-55 to +150  
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted  
Rev.A2  
www.gulfsemi.com  

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