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1N5403 PDF预览

1N5403

更新时间: 2024-11-13 14:46:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 502K
描述
DO-27

1N5403 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
27 Plastic-Encapsulate Diodes  
G eneral Purpose Rectifier Diodes  
1N5400 THRU 1N5408  
Features  
● IF(AV)  
3.0A  
DO-27  
● VRRM  
50V-1000V  
● High surge current capability  
Polarity: Color band denotes cathode  
Applications  
● Rectifier  
Marking  
1N54XX  
:
XX From 00To 08  
Limiting Values(Absolute Maximum Rating)  
1N54  
01 02 03 04 05 06 07 08  
Symbol Unit  
Item  
Test Conditions  
00  
VRRM  
V
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
200  
300  
50 100  
500 600 800 1000  
400  
70 140 210 280 350 420 560 700  
V
V
V
35  
RMS  
VDC  
Maximum DC Blocking Voltage  
200  
300  
50 100  
500 600 800 1000  
400  
60Hz Half-sine wave  
Average Forward Current  
IF(AV)  
A
A
3
Resistance loadT =75℃  
a
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave  
1 cycleTa=25℃  
150  
IFSM  
-55 ~ +150  
Junction Temperature  
Storage Temperature  
TJ  
-55 ~ +150  
TSTG  
Electrical Characteristics (T=25Unless otherwise specified  
Value  
Symbol Unit  
Test Condition  
Item  
VFM  
V
1.1  
IFM=3.0A  
Maximum Peak Forward Voltage  
IRRM1  
T =25  
5
a
VRM=VRRM  
Maximum Peak Reverse Current  
Typical junction capacitance  
μA  
IRRM2  
100  
T =125  
a
Measured at 1MHz and applied  
reverse voltage of 4.0V D.C.  
pF  
CJ  
30  
Between junction and ambient  
20  
10  
Rθ  
J-A  
J-L  
Typical Thermal Resistance  
/  
W
Rθ  
Between junction and Lead  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper  
pad areas  
www.jscj-elec.com  
Rev. - 1.0  
1

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