Datasheet > 1N5398

1N5398

更新时间： 2024-10-31 14:52:59

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	285K
描述
Rectifier device Common rectifier diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5398 数据手册

1N5391 - 1N5399

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.5 A

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds,0.37” 5(9.5mm) lead length,

5 lbs. (2.3kg) tension

DO-15

Min

Mechanical Data

Dim

Max

—

Case : DO-15 Molded plastic

Epoxy : UL94V-O rate flame retardant

Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

25.40

5.50

7.62

0.889

3.60

0.686

2.60

Polarity : Color band denotes cathode end

Mounting position : Any

All Dimensions in mm

Weight : 0.465 gram

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

1N 1N 1N

SYMBOLS

UNITS

5391 5392 5393 5394 5395 5396 5397 5398 5399

Maximum repetitive peak reverse voltage

Maximum RMS voltage

50 100 200 300 400 500 600 800 1000 VOLTS

35 70 140 210 280 350 420 560 700 VOLTS

50 100 200 300 400 500 600 800 1000 VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

1.5

Amps

IFSM

50.0

1.4

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 1.5A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

50.0

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

20.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

1 of 2

www.sunmate.tw

中文翻译

下载PDF

与1N5398相关器件

型号	品牌	获取价格	描述	数据表
1N5398(G)	LGE	获取价格	暂无描述
1N5398/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/51	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/62	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/64	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/65	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,

与1N5398相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

18
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5398

1N5398 数据手册

与1N5398相关器件

与1N5398相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5398

1N5398 数据手册

与1N5398相关器件

与1N5398相关文章

您还可以找

您在本页遇到什么问题？