Datasheet > 1N5393GP-E3/4H

1N5393GP-E3/4H

更新时间： 2024-11-07 04:57:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	326K
描述
DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier Diode

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中文翻译

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1N5393GP-E3/4H 数据手册

1N5391GP thru 1N5399GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1.5 A

50 V to 1000 V

50 A

5.0 µA

V_F

1.4 V

T_jmax.

175 °C

DO-204AC (DO-15)

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current, typical I less than 0.1 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

1N53

91GP

1N53

92GP

1N53

93GP

1N53

94GP

1N53

95GP

1N53

96GP

1N53

97GP

1N53

98GP

1N53 Unit

99GP

* Maximum repetitive peak

reverse voltage

V_RRM

100

200

300

400

500

600

800

1000

* Maximum RMS voltage

V_RMS

V_DC

140

200

210

300

280

400

350

500

420

600

560

800

700

* Maximum DC blocking

voltage

100

1000

* Maximum average forward

rectified current 0.375" (9.5

mm) lead length at T_L= 70 °C

I_F(AV)

1.5

* Peak forward surge current

8.3 ms single half sine-wave

super-imposed on rated load

I_FSM

* Maximum full load reverse

current, full cycle average

0.375" (9.5 mm) lead length at

I_R(AV)

300

µA

T_A= 70 °C

* Operating junction and

T_J,T_STG

- 65 to + 175

°C

storage temperature range

Document Number 88515

14-Oct-05

www.vishay.com

12 3 4

中文翻译

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与1N5393GP-E3/4H相关器件

型号	品牌	获取价格	描述	数据表
1N5393GP-E3/56	VISHAY	获取价格	DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
1N5393GP-E3/58	VISHAY	获取价格	DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
1N5393GP-E3/60	VISHAY	获取价格	DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
1N5393GP-E3/64	VISHAY	获取价格	DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
1N5393GP-E3/70	VISHAY	获取价格	DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
1N5393GP-E3/90	VISHAY	获取价格	DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
1N5393GS	YANGJIE	获取价格	DO-41
1N5393G-T	DIODES	获取价格	1.5A GLASS PASSIVATED RECTIFIER
1N5393-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
1N5393H12	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15,

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