1N5393

更新时间： 2024-11-06 06:16:43

品牌	Logo	应用领域
SYNSEMI		二极管
页数	文件大小	规格书
2页	24K
描述
SILICON RECTIFIERDIODES

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数据手册

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1N5393 数据手册

SILICON RECTIFIERDIODES

1N5391 - 1N5399

DO - 41

PRV : 50 - 1000 Volts

Io : 1.5 Amperes

FEATURES :

1.00 (25.4)

* High current capability

* High surge current capability

* High reliability

0.107 (2.7)

MIN.

0.080 (2.0)

* Low reverse current

* Low forward voltage drop

0.205 (5.2)

0.166 (4.2)

1.00 (25.4)

MECHANICAL DATA :

0.034 (0.86)

MIN.

0.028 (0.71)

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.34 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

UNIT

5391 5392 5393 5394 5395 5396 5397 5398 5399

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100 200 300 400 500 600 800 1000

70 140 210 280 350 420 560 700

Maximum DC Blocking Voltage

100 200 300 400 500 600 800 1000

1.5

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 70°C

Peak Forward Surge Current

IFSM

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.5 Amps.

1.4

5.0

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25 °C

IR(H)

Ta = 100 °C

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

Storage Temperature Range

°C/W

°C

RqJA

- 65 to + 175

TSTG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V_DC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 01 : January 10, 2004

中文翻译

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