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1N5392GP-TP PDF预览

1N5392GP-TP

更新时间: 2024-11-25 13:03:35
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 80K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N5392GP-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-15
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.07
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 VJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5392GP-TP 数据手册

 浏览型号1N5392GP-TP的Datasheet PDF文件第2页浏览型号1N5392GP-TP的Datasheet PDF文件第3页 
1N5391  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
THRU  
1N5399  
Features  
·
·
·
·
Low Current Leakage  
Low Forward Voltage  
High Current Capability  
Low Cost  
1.5 Amp Rectifier  
50 - 1000 Volts  
Maximum Ratings  
DO-15  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance; 26°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5391  
1N5392  
1N5393  
1N5394  
1N5395  
1N5396  
1N5397  
1N5398  
1N5399  
---  
---  
---  
---  
---  
---  
---  
---  
---  
50V  
100V  
200V  
300V  
400V  
500V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
300V  
400V  
500V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
210V  
280V  
350V  
420V  
560V  
700V  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.5A  
TA = 70°C  
Peak Forward Surge  
Current  
IFSM  
50A  
8.3ms, half sine**  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.5A;  
TJ = 25°C*  
INCHES  
MIN  
.230  
.104  
.026  
MM  
MIN  
5.80  
2.60  
.70  
DIM  
A
B
C
D
MAX  
.300  
.140  
.034  
---  
MAX  
7.60  
3.60  
.90  
NOTE  
5.0mA  
50mA  
TJ = 25°C  
TJ = 100°C  
1.000  
25.40  
---  
Typical Junction  
Capacitance  
CJ  
20pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
**8.3ms single half-wave superimposed on rated load(JEDEC method)  
at Ta=75 deg C.  
www.mccsemi.com  

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