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1N5392LEADFREE PDF预览

1N5392LEADFREE

更新时间: 2024-11-25 19:54:55
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 371K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15,

1N5392LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.04应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1N5392LEADFREE 数据手册

 浏览型号1N5392LEADFREE的Datasheet PDF文件第2页 
1N5391 THRU 1N5399  
www.centralsemi.com  
SILICON RECTIFIERS  
1.5 AMP, 50 THRU 1000 VOLT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N5391 series  
devices are silicon rectifiers designed for general  
purpose rectifier applications.  
MARKING: FULL PART NUMBER  
DO-15 CASE  
MAXIMUM RATINGS: (T =70°C unless otherwise noted)  
1N  
A
SYMBOL 5391 5392 5393 5394 5395 5396 5397 5398 5399 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
50 100 200 300 400 500 600 800 1000  
50 100 200 300 400 500 600 800 1000  
V
V
V
A
A
RRM  
V
R
RMS Reverse Voltage  
V
35  
70 140 210 280 350 420 560 700  
R(RMS)  
Average Forward Current (T =55°C)  
A
Peak Forward Surge Current (tp=8.3ms)  
I
1.5  
50  
O
I
FSM  
Operating and Storage  
Junction Temperature  
T , T  
-55 to +150  
45  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
I
V =Rated V  
1.0  
μA  
R
R
RRM  
RRM  
I
V =Rated V  
, T =100°C  
50  
μA  
V
R
R
J
V
I =1.5A  
1.4  
F
F
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
R2 (7-November 2013)  

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