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1N5391S-GT3 PDF预览

1N5391S-GT3

更新时间: 2024-11-25 14:33:43
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
3页 136K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

1N5391S-GT3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.18
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5391S-GT3 数据手册

 浏览型号1N5391S-GT3的Datasheet PDF文件第2页浏览型号1N5391S-GT3的Datasheet PDF文件第3页 
SENSITRON  
1N5391S – 1N5399S  
SEMICONDUCTOR  
1.5A SILICON RECTIFIER  
Data Sheet 2579, Rev. —  
Features  
Diffused Junction  
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Fast Switching for High Efficiency  
High Current Capability and Low Forward Voltage Drop  
Low Reverse Leakage Current  
Surge Overload Rating to 50 A Peak  
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Plastic Material – UL Flammability Classification Rating 94V-0  
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DO-41  
Max  
Mechanical Data  
Dim  
A
Min  
Min  
Max  
Case: Molded Plastic  
25.4  
1.000  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
B
4.06 5.21 0.159 0.205  
0.71 0.864 0.028 0.034  
2.00 2.72 0.079 0.107  
C
D
Weight: 0.30 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
In mm  
In inch  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Symbol  
Unit  
5391S 5392S 5393S 5395S 5397S 5398S 5399S  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.5  
700  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 70°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
50  
A
Forward Voltage  
@IF = 1.5A  
VFM  
IRM  
1.1  
V
µA  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
50  
Typical Junction Capacitance (Note 2)  
Cj  
20  
55  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
RθJA  
K/W  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-65 to +150  
-65 to +150  
°C  
°C  
TSTG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
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