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1N5391 PDF预览

1N5391

更新时间: 2024-10-31 14:52:47
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1578K
描述
DO-15

1N5391 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTTDD  
15 Plastic-Encapsulate Diodes  
G eneral Purpose Rectifier Diodes  
1N5391 THRU 1N5399  
Features  
IF(AV)  
1.5A  
DO-15  
VRRM  
50V-1000V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
1N539X  
:
X From 1 To 9  
Limiting Values(Absolute Maximum Rating)  
1N53  
Item  
Symbol Unit  
Test Conditions  
92  
93  
95 97 98  
99  
91  
VRRM  
V
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
50  
35  
50  
100  
70  
800 1000  
700  
600  
200 400  
140 280 420 560  
V
V
V
RMS  
VDC  
100  
800 1000  
600  
Maximum DC Blocking Voltage  
200 400  
60Hz Half-sine wave  
Resistance loadTL=75℃  
Average Forward Current  
1.5  
IF(AV)  
A
A
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave  
1 cycleTa=25℃  
50  
IFSM  
Junction Temperature  
Storage Temperature  
-55 ~ +150  
TJ  
-55 ~ +150  
TSTG  
Electrical Characteristics (T=25Unless otherwise specified  
Symbol Unit  
Test Condition  
Value  
Item  
VFM  
V
1.1  
IFM =1.5A  
Maximum Peak Forward Voltage  
IRRM1  
T =25  
5
a
VRM=VRRM  
Maximum Peak Reverse Current  
Typical junction capacitance  
μA  
IRRM2  
T =100  
a
50  
Measured at 1MHz and applied  
reverse voltage of 4.0V D.C.  
CJ  
20  
50  
25  
pF  
Between junction and ambient  
Rθ  
J-A  
J-L  
Typical Thermal Resistance  
/  
W
Rθ  
Between junction and Lead  
Notes:  
Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted  
www.jscj-elec.com  
Rev. - 1.0  
1

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