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1N5381B PDF预览

1N5381B

更新时间: 2024-11-23 06:21:31
品牌 Logo 应用领域
商升特 - SEMTECH 稳压二极管测试
页数 文件大小 规格书
3页 312K
描述
5 W SILICON ZENER DIODES

1N5381B 数据手册

 浏览型号1N5381B的Datasheet PDF文件第2页浏览型号1N5381B的Datasheet PDF文件第3页 
1N5335B THRU 1N5388B  
5 W SILICON ZENER DIODES  
Features  
• High peak reverse power dissipation  
• High reliability  
• Low leakage current  
Descriptions  
Standard case is DO-15, D2A case is available  
upon request. For example: 1N5335B (D2A) means  
the case in D2A.  
Mechanical Data  
• Epoxy: UL94V-0 rate flame retardant  
• Lead: Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
• Polarity: Color band denotes cathode end  
• Mounting position: Any  
O
Absolute Maximum Ratings (Rating at 25 C ambient temperature unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
W
1)  
O
DC Power Dissipation @ TL = 75 C  
PD  
5
O
C
Junction and Storage Temperature Range  
Tj, TS  
- 65 to + 200  
1) TL = Lead temperature at 3/8" (9.5 mm) from body  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
VF  
Max.  
1.2  
Unit  
V
Forward Voltage  
at IF = 1 A  
O
Electrical Characteristics (Rating at 25 C ambient temperature unless otherwise specified)  
Maximum Reverse  
Leakage Current  
Maximum DC  
Zener Current  
Zener Voltage 1)  
Maximum Zener Impedance  
Type  
VZnom  
V
VZ (V)  
at IZT  
mA  
ZZT  
2
at IZT  
mA  
ZZK  
at IZK  
IR  
µA  
50  
10  
5
at VR  
IZM  
mA  
Min.  
3.71  
4.09  
4.47  
4.85  
5.32  
5.7  
Max.  
4.09  
4.51  
4.93  
5.35  
5.88  
6.3  
mA  
1
V
1
1
1
1
2
3
3
1N5335B  
1N5336B  
1N5337B  
1N5338B  
1N5339B  
1N5340B  
1N5341B  
3.9  
4.3  
4.7  
5.1  
5.6  
6
320  
290  
260  
240  
220  
200  
200  
320  
290  
260  
240  
220  
200  
200  
500  
500  
450  
400  
400  
300  
200  
1220  
1100  
1010  
930  
856  
790  
2
1
2
1
1.5  
1
1
1
1
1
1
1
1
1
6.2  
5.89  
6.51  
1
1
765  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 19/07/2008  
E

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