Datasheet > 1N5366B

1N5366B

更新时间： 2024-11-12 22:38:03

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管测试 IOT
页数	文件大小	规格书
4页	306K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts)

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数据手册

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1N5366B 数据手册

P a r t N u mb e r : 1 N 5 3 4 8 B ~ 1 N 5 3 8 8 B

Approve Sheet

DATA SHEET

1N5 3 4 8 B~ 1N5 3 8 8 B

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE- 11 to 200 Volts Power - 5.0 Watts

Unit: inch ( mm )

DO-201AE

FEATURES

(

.042 1.07

)

(

.037 .94

)

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Typical I_Rless than 5.0µA above 11V

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

MECHANICALDATA

Case: JEDEC DO-201AE, Molded plastic over passivated junction

Terminals: solder platble,solderable per MIL-STD-750,Method 2026

(

.210 5.3

)

(

.188 4.8

Standard Packing: 52mm tape

Weight: 0.04 ounce, 1.1 gram

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

VALUE

UNITS

Watts

5.0

DC Power Dissipation on T_L=75°C ,Measure at Zero Lead Length

Derate above 75°C ( NOTE 1)

mW / °C

40.0

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

See Fig. 5

Amps

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

NOTES:

1.Mounted on 8.0mm²copper pads to each terminal.

2.8.3ms single half sine-wave ,or equivalent square wave ,duty cycle=4 pulses per minute maximum.

P AGE . 1

12 3 4

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