Datasheet > 1N5362B

1N5362B

更新时间： 2024-11-11 22:38:03

品牌	Logo	应用领域
TRSYS		稳压二极管
页数	文件大小	规格书
5页	270K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

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1N5362B 数据手册

1N5348B THRU 1N5388B

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts

DO-201AE

FEATURES

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Typical I_Dless than 1 A above 13V

High temperature soldering :

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-201AE Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

method 2026

Standard Packaging: 52mm tape

Weight: 0.04 ounce, 1.1 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_D

VALUE

5.0

40.0

UNITS

Watts

mW/

DC Power Dissipation @ T_L=75 , Measure at Zero Lead Length(Fig. 1)

Derate above 75 (Note 1)

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated

load(JEDEC Method) (Note 1,2)

I_FSM

See Fig. 5

Amps

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

NOTES:

1. Mounted on 8.0mm²copper pads to each terminal.

2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.

12 3 4 5

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