1N5361B

更新时间： 2024-11-12 06:25:55

品牌	Logo	应用领域
EIC		稳压二极管
页数	文件大小	规格书
3页	70K
描述
SILICON ZENER DIODES

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中文翻译

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数据手册

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1N5361B 数据手册

TH97/2478

TH09/2479

IATF 0060636

SGS TH07/1033

SILICON ZENER DIODES

1N5338B - 1N5388B

DO-15

: 5.1 - 200 Volts

: 5 Watts

1.00 (25.4)

0.142 (3.6)

0.102 (2.6)

MIN.

FEATURES :

* Complete Voltage Range 5.1 to 200 Volts

* High peak reverse power dissipation

* High reliability

0.300 (7.6)

0.230 (5.8)

* Low leakage current

* Pb / RoHS Free

1.00 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

MECHANICAL DATA :

* Case : DO-15 Molded plastic

* Epoxy : UL94V-0 rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.4 gram

MAXIMUM RATINGS

Rating at 25 °C ambient temperature unless otherwise specified

Rating

DC Power Dissipation at TL = 75 °C (Note1)

Maximum Forward Voltage at IF = 1 A

Maximum Thermal Resistance Junction to Ambient Air (Note2)

Junction Temperature Range

Symbol

Value

5.0

Unit

1.2

K / W

°C

RθJA

- 65 to + 200

Storage Temperature Range

°C

Note :

(1) T^L= Lead temperature at 3/8 " (9.5mm) from body

Fig. 2 TYPICAL THERMAL RESISTANCE

Fig. 1 POWER TEMPERATURE DERATING CURVE

L = 3/8" (9.5mm)

0.2

0.4

0.6

0.8

1.0

100

125

150

175

200

TL, LEAD TEMPERATURE (°C)

LEAD LENGTH TO HEATSINK(INCH)

Page 1 of 3

Rev. 10 : March 9, 2010

12 3

中文翻译

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