Datasheet > 1N5335BE3/TR13

1N5335BE3/TR13

更新时间： 2024-11-01 18:33:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	123K
描述
Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, DO-201AE

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技术参数
数据手册
替代型号

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1N5335BE3/TR13 技术参数

生命周期：	Obsolete	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.64
Is Samacsys：	N	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-201AE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	标称参考电压：	3.9 V
表面贴装：	NO	技术：	ZENER
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	最大电压容差：	5%
工作测试电流：	320 mA	Base Number Matches：	1

1N5335BE3/TR13 数据手册

1N5333B thru 1N5388B, e3

Silicon 5 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt

Zeners provides voltage regulation in a selection from 3.3 to 200 volts with

different tolerances as identified by specific suffix letter on the part number.

These plastic encapsulated Zeners have moisture classification of Level 1

with no dry pack required and are also available in various military

equivalent screening levels by adding a prefix identifier as also described in

the Features section. They may be operated at high maximum dc currents

with adequate heat sinking with their comparatively low thermal resistance

design. Microsemi also offers numerous other Zener products to meet

higher and lower power applications.

T-18

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N5333 to 1N5388B

Zener voltage available 3.3V to 200V

• Regulates voltage over a broad operating current and

temperature range

• Wide selection from 3.3 to 200 V

Standard voltage tolerances are plus/minus 5% with B

suffix and 10 % with A suffix identification

• Flexible axial-lead mounting terminals

• Nonsensitive to ESD per MIL-STD-750 Method 1020

• Withstands high surge stresses

• Minimal changes of voltage versus current as

specified by voltage regulation (ΔV_Z)

•

Tight tolerances available in plus or minus 2% or 1%

with C or D suffix respectively

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available

by adding MQ, MX, or MV prefixes respectively to

part numbers.

• High specified maximum current (I_ZM) when

adequately heat sunk

•

Surface mount equivalents available as SMBJ5333 to

SMBJ5388B, or SMBG5333B to SMBG5388B

• Moisture classification is Level 1 per IPC/JEDEC J-

STD-020B with no dry pack required

RoHS Compliant devices available by adding e3 suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 5.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

TERMINALS: Leads, Tin-Lead or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, method 2026

+150^ºC

Thermal Resistance: 25 ^ºC/W junction to lead at 3/8

(10 mm) lead length from body, or 85^ºC/W junction

to ambient when mounted on FR4 PC board (1oz

Cu) with 4 mm²copper pads and track width 1

mm, length 25 mm

Steady-State Power: 5 watts at T_L< 25^oC 3/8 inch

(10 mm) from body, or 1.47 watts at T_A= 25^ºC

when mounted on FR4 PC described for thermal

resistance (also see Figure 1)

•

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end.

•

MARKING: Part number

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.7 grams

See package dimensions on last page

•

Forward voltage @1.0 A: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

8-06-2008 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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1N5335BE3/TR13 替代型号

型号	品牌	替代类型	描述	数据表
1N5335BE3	MICROSEMI	类似代替	Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5335B	MICROSEMI	类似代替	Silicon 5 Watt Zener Diodes

与1N5335BE3/TR13相关器件

型号	品牌	获取价格	描述	数据表
1N5335BE3/TR7	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, DO-201AE
1N5335BE3/TR8	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5335BE3TR	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5335BG	ONSEMI	获取价格	5 Watt Surmetic TM 40 Zener Voltage Regulators
1N5335BRL	ONSEMI	获取价格	5 Watt Surmetic 40 Zener Voltage Refulators
1N5335BRL	STMICROELECTRONICS	获取价格	3.9V, 5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5335BRLG	ONSEMI	获取价格	5 Watt Surmetic TM 40 Zener Voltage Regulators
1N5335B-T3-LF	WTE	获取价格	Zener Diode
1N5335BTA	ONSEMI	获取价格	5 Watt Surmetic 40 Zener Voltage Refulators
1N5335BTR	MICROSEMI	获取价格	Silicon 5 Watt Zener Diodes

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