是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | O-LALF-W2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.09 | Is Samacsys: | N |
其他特性: | MAXIMUM DYNAMIC IMPEDANCE IS 235K OHMS | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | CURRENT REGULATOR DIODE | JEDEC-95代码: | DO-204AA |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
膝阻抗最大值: | 12000 Ω | 最大限制电压: | 2.9 V |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 最低工作温度: | -55 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
最大功率耗散: | 0.6 W | 认证状态: | Not Qualified |
标称调节电流 (Ireg): | 4.7 mA | 最大重复峰值反向电压: | 100 V |
表面贴装: | NO | 技术: | FIELD EFFECT |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1N5314-1E3 | MICROSEMI |
功能相似 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-7, ROHS COMPLIANT, HERMETIC SE | |
1N5314 | CENTRAL |
功能相似 |
SILICON CURRENT LIMITING DIODE DESCRIPTION: |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5314-1 | CDI-DIODE |
获取价格 |
CURRENT REGULATOR DIODES | |
1N5314-1 | MICROSEMI |
获取价格 |
CURRENT REGULATOR DIODES | |
1N5314-1E3 | MICROSEMI |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-7, ROHS COMPLIANT, HERMETIC SE | |
1N5314-1TR | MICROSEMI |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, | |
1N5314-1TRE3 | MICROSEMI |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, | |
1N5314CO | AEROFLEX |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DIE-1 | |
1N5314RL | MOTOROLA |
获取价格 |
4.7mA, SILICON, CURRENT REGULATOR DIODE, DO-204AA | |
1N5314TR | CENTRAL |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-35, HERMETIC SEALED, GLASS PAC | |
1N5314TRLEADFREE | CENTRAL |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-35, HERMETIC SEALED, GLASS PAC | |
1N5314TRPBFREE | CENTRAL |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, |