是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-213AB |
包装说明: | HERMETIC SEALED, GLASS, LL41, MELF-2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.23 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | CURRENT REGULATOR DIODE | JEDEC-95代码: | DO-213AB |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
最大限制电压: | 2.9 V | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
最大功率耗散: | 0.5 W | 认证状态: | Not Qualified |
标称调节电流 (Ireg): | 4.7 mA | 表面贴装: | YES |
技术: | FIELD EFFECT | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5314UR-1E3 | MICROSEMI |
获取价格 |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-213AB, ROHS COMPLIANT, HERMETI | |
1N5318 | NJSEMI |
获取价格 |
Fast Rectifiers | |
1N532 | NJSEMI |
获取价格 |
Diode Zener Single 87V 5W 2-Pin DO-201AE | |
1N533 | NJSEMI |
获取价格 |
Diode Zener Single 87V 5W 2-Pin DO-201AE | |
1N5331 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N5331A | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N5331AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 22A, 1400V V(RRM), Silicon, DO-203AA, DO4, 1 PIN | |
1N5331E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 22A, 1400V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 P | |
1N5331R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 22A, 1400V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 P | |
1N5331RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 22A, 1400V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 P |