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1N5257D-T PDF预览

1N5257D-T

更新时间: 2024-10-29 06:40:03
品牌 Logo 应用领域
美微科 - MCC 测试二极管
页数 文件大小 规格书
5页 340K
描述
Zener Diode, 33V V(Z), 1%, 0.5W,

1N5257D-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.33
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:58 ΩJESD-609代码:e0
元件数量:1最高工作温度:150 °C
最大功率耗散:0.5 W标称参考电压:33 V
子类别:Voltage Reference Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)最大电压容差:1%
工作测试电流:3.8 mA

1N5257D-T 数据手册

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1N5221  
THRU  
1N5276  
M C C  
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20736 Marilla Street Chatsworth  
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TM  
Micro Commercial Components  
Features  
Wide Voltage Range Available  
500 mW  
Zener Diode  
2.4 to 150 Volts  
Glass Package  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Marking : Cathode band and type number  
Maximum Ratings  
DO-35  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
500 mWatt DC Power Dissipation  
Power Derating: 4.0mW/°C above 50°C  
Forward Voltage @ 200mA: 1.1 Volts  
Figure 1 - Typical Capacitance  
100  
D
A
Cathode  
Mark  
pf  
B
10  
At zero volts  
D
At –2 Volts VR  
1
C
0
100  
200  
VZ  
Typical Capacitance (pf) – versus – Zener voltage (VZ)  
Figure 2 - Derating Curve  
400  
DIMENSIONS  
mW  
200  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
---  
---  
---  
25.40  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
2.00  
.52  
NOTE  
1.000  
---  
0
50  
Temperature °C  
Power Dissipation (mW) - Versus - Temperature °C  
100  
150  
www.mccsemi.com  
Revision: 3  
2006/06/05  
1 of 5  

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