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1N5244B PDF预览

1N5244B

更新时间: 2024-11-14 07:17:15
品牌 Logo 应用领域
威伦 - WILLAS 二极管
页数 文件大小 规格书
3页 380K
描述
Silicon Z–Diodes

1N5244B 数据手册

 浏览型号1N5244B的Datasheet PDF文件第2页浏览型号1N5244B的Datasheet PDF文件第3页 
1N5267B  
1N5221B THRU  
WILLAS  
Silicon Z–Diodes  
Unit: inch (mm)  
.022(0.55)  
.018(0.45)  
DO-35  
Features  
1.02(26.0)  
MIN.  
Plannar Die constuction  
500mW Power Dissipation  
Ideally Suited for Automated Assembly Processes  
.153(3.6)  
.132(3.0)  
V –tolerance ± 5%  
Z
Applications  
.087(2.2)  
.067(1.7)  
Voltage stabilization  
1.02(26.0)  
MIN.  
MECHANICAL DATA  
Approx. Weight:  
0.136 grams  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
est Conditions  
=25 C  
amb  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
T
P
TOT  
T
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=9.5mm (3/8”), T =constant  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.1  
V
F
V
F
2010.06  
WILLS ELECTRONIC CORP.  

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