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1N5229BRA1 PDF预览

1N5229BRA1

更新时间: 2024-02-05 05:44:46
品牌 Logo 应用领域
安森美 - ONSEMI 测试二极管
页数 文件大小 规格书
12页 83K
描述
4.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

1N5229BRA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-204包装说明:O-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:22 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:4.3 V
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N5229BRA1 数据手册

 浏览型号1N5229BRA1的Datasheet PDF文件第1页浏览型号1N5229BRA1的Datasheet PDF文件第3页浏览型号1N5229BRA1的Datasheet PDF文件第4页浏览型号1N5229BRA1的Datasheet PDF文件第5页浏览型号1N5229BRA1的Datasheet PDF文件第6页浏览型号1N5229BRA1的Datasheet PDF文件第7页 
1N5221B Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
otherwise noted, Based on dc measurements at thermal  
A
I
I
F
equilibrium; lead length = 3/8; thermal resistance of heat sink  
= 30°C/W, V = 1.1 V Max @ I = 200 mA for all types)  
F
F
Symbol  
Parameter  
V
I
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
V
Z
V
R
V
ZT  
I
ZT  
V
F
R
Z
Maximum Zener Impedance @ I  
ZT  
ZK  
ZT  
ZK  
I
I
Reverse Current  
Z
ZK  
Maximum Zener Impedance @ I  
I
Reverse Leakage Current @ V  
Breakdown Voltage  
R
R
V
R
I
F
Forward Current  
Zener Voltage Regulator  
V
F
Forward Voltage @ I  
F
q
Maximum Zener Voltage Temperature Coefficient  
VZ  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead  
A
length = 3/8; thermal resistance of heat sink = 30°C/W, V = 1.1 V Max @ I = 200 mA for all types)  
F
F
Zener Voltage (Note 3.)  
Zener Impedance (Note 4.)  
Leakage Current  
@ V  
q
VZ  
V (Volts)  
Z
@ I  
Z
ZT  
@ I  
Z
ZK  
@ I  
I
R
(Note 5.)  
ZT  
ZT  
ZK  
R
Device  
Device  
Min  
Nom  
Max  
mA  
W
W
mA  
µA  
Volts  
%/5C  
(Note 2.)  
Marking  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
2.28  
2.375  
2.565  
2.66  
2.4  
2.5  
2.7  
2.8  
3.0  
2.52  
2.625  
2.835  
2.94  
20  
20  
20  
20  
20  
30  
30  
30  
30  
29  
1200  
1250  
1300  
1400  
1600  
0.25  
0.25  
0.25  
0.25  
0.25  
100  
100  
75  
75  
50  
1
1
1
1
1
–0.085  
–0.085  
–0.08  
–0.08  
–0.075  
2.85  
3.15  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
3.14  
3.42  
3.71  
4.09  
4.47  
3.3  
3.6  
3.9  
4.3  
4.7  
3.46  
3.78  
4.09  
4.51  
4.93  
20  
20  
20  
20  
20  
28  
24  
23  
22  
19  
1600  
1700  
1900  
2000  
1900  
0.25  
0.25  
0.25  
0.25  
0.25  
25  
15  
10  
5
1
1
1
1
2
–0.07  
–0.065  
–0.06  
±0.055  
±0.03  
5
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
4.85  
5.32  
5.7  
5.89  
6.46  
5.1  
5.6  
6.0  
6.2  
6.8  
5.35  
5.88  
6.3  
6.51  
7.14  
20  
20  
20  
20  
20  
17  
11  
7
7
5
1600  
1600  
1600  
1000  
750  
0.25  
0.25  
0.25  
0.25  
0.25  
5
5
5
5
3
2
3
3.5  
4
+ 0.03  
0.038  
0.038  
0.045  
0.05  
5
2. TOLERANCE  
The JEDEC type numbers shown indicate a tolerance of ±5%.  
3. ZENER VOLTAGE (V ) MEASUREMENT  
Z
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T ) at 30°C ± 1°C and 3/8lead  
L
length.  
4. ZENER IMPEDANCE (Z ) DERIVATION  
Z
Z
ZT  
and Z are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I  
=
Z(ac)  
ZK  
0.1 I  
with the ac frequency = 60 Hz.  
Z(dc)  
5. TEMPERATURE COEFFICIENT (q ) *  
VZ  
Test conditions for temperature coefficient are as follows:  
A. I = 7.5 mA, T = 25°C, T = 125°C (1N5221B through 1N5242B)  
ZT  
1
2
B. I = Rated I , T = 25°C, T = 125°C (1N5243B through 1N5281B)  
ZT  
ZT  
1
2
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.  
* For more information on special selections contact your nearest ON Semiconductor representative.  
http://onsemi.com  
2

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