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1N5229BRA1 PDF预览

1N5229BRA1

更新时间： 2024-01-22 14:28:37
品牌 Logo 应用领域
安森美 - ONSEMI 测试二极管
页数 文件大小 规格书
12页 83K
描述
4.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

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1N5229BRA1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-204包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
最大动态阻抗：22 ΩJEDEC-95代码：DO-35
JESD-30 代码：O-LALF-W2元件数量：1
端子数量：2最高工作温度：200 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified标称参考电压：4.3 V
子类别：Voltage Reference Diodes表面贴装：NO
技术：ZENER端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：5%工作测试电流：20 mA
Base Number Matches：1

1N5229BRA1 数据手册

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1N5221B Series  
APPLICATION NOTE — ZENER VOLTAGE  
500  
400  
300  
200  
100  
0
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to determine  
junction temperature under any set of operating conditions  
in order to calculate its value. The following procedure is  
recommended:  
L
L
Lead Temperature, T , should be determined from:  
L
2.4-60ĂV  
TL = θLAPD + TA.  
θ
is the lead-to-ambient thermal resistance (°C/W) and P  
D
LA  
62-200ĂV  
0.6  
is the power dissipation. The value for θ will vary and  
LA  
depends on the device mounting method. θ is generally 30  
LA  
to 40°C/W for the various clips and tie points in common use  
and for printed circuit board wiring.  
0
0.2  
0.4  
0.8  
1
The temperature of the lead can also be measured using a  
thermocouple placed on the lead as close as possible to the  
tie point. The thermal mass connected to the tie point is  
normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result of  
pulsed operation once steady-state conditions are achieved.  
L, LEAD LENGTH TO HEAT SINK (INCH)  
Figure 2. Typical Thermal Resistance  
1000  
7000  
5000  
TYPICAL LEAKAGE CURRENT  
AT 80% OF NOMINAL  
BREAKDOWN VOLTAGE  
Using the measured value of T , the junction temperature  
L
2000  
may be determined by:  
1000  
700  
500  
TJ = TL + ∆TJL.  
∆T is the increase in junction temperature above the lead  
JL  
200  
temperature and may be found from Figure 2 for dc power:  
∆TJL = θJLPD.  
100  
70  
50  
For worst-case design, using expected limits of I , limits  
Z
of P and the extremes of T (∆T ) may be estimated.  
D
J
J
20  
Changes in voltage, V , can then be found from:  
Z
10  
7
5
∆V = θVZTJ.  
θ
, the zener voltage temperature coefficient, is found  
VZ  
2
from Figures 4 and 5.  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zener resistance. For best regulation, keep current  
excursions as low as possible.  
1
0.7  
0.5  
+125°C  
0.2  
Surge limitations are given in Figure 7. They are lower  
than would be expected by considering only junction  
temperature, as current crowding effects cause temperatures  
to be extremely high in small spots, resulting in device  
degradation should the limits of Figure 7 be exceeded.  
0.1  
0.07  
0.05  
0.02  
0.01  
0.007  
0.005  
+25°C  
0.002  
0.001  
3
4
5
6
7
8
9
10 11 12 13 14 15  
V , NOMINAL ZENER VOLTAGE (VOLTS)  
Z
Figure 3. Typical Leakage Current  
http://onsemi.com  
5
12345678...12

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