1N4946GP-TP-HF

更新时间： 2024-11-01 13:03:35

品牌	Logo	应用领域
美微科 - MCC		整流二极管快速恢复二极管
页数	文件大小	规格书
3页	83K
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中文翻译

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数据手册

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1N4946GP-TP-HF 数据手册

1N4942

THRU

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N4948

Features

Low Leakage Current

1 Amp Fast Recovery

Rectifier

Metalurgically Bonded Construction

Low Cost

Fast Switching For High Efficiency

200 to 1000 Volts

Maximum Ratings

DO-41

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 50°C/W Junction To Ambient

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

200V

400V

600V

800V

1000V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N4942

1N4944

1N4946

1N4947

1N4948

---

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_A=55°C

Peak Forward Surge

Current

I_FSM

25A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Maximum Reverse

Recovery Time

1N4942-4944

1N4946-4947

1N4948

V_F

I_R

1.3V

I_FM= 1.0A;

T_A= 25°C*

5.0mA

500mA

T_J= 25°C

T_J= 175°C

DIMENSIONS

INCHES

MIN

.166

.080

.028

MIN

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

4.10

2.00

.70

T_rr

C_J

150ns

250ns

500ns

15pF

I_F=0.5A,

1.000

25.40

---

I_R=1.0A,

I_rr=0.25A

Measured at

1.0MHz,

V_R=4.0V

Typical Junction

Capacitance

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

12 3

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1N4946H04	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,