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1N4946GP-BP PDF预览

1N4946GP-BP

更新时间: 2024-02-07 22:38:04
品牌 Logo 应用领域
美微科 - MCC 整流二极管快速恢复二极管
页数 文件大小 规格书
3页 83K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N4946GP-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-41
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):265
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.25 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4946GP-BP 数据手册

 浏览型号1N4946GP-BP的Datasheet PDF文件第2页浏览型号1N4946GP-BP的Datasheet PDF文件第3页 
1N4942  
THRU  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
1N4948  
Features  
·
·
·
·
Low Leakage Current  
1 Amp Fast Recovery  
Rectifier  
Metalurgically Bonded Construction  
Low Cost  
Fast Switching For High Efficiency  
200 to 1000 Volts  
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 50°C/W Junction To Ambient  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N4942  
1N4944  
1N4946  
1N4947  
1N4948  
---  
---  
---  
---  
---  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA =55°C  
Peak Forward Surge  
Current  
IFSM  
25A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum Reverse  
Recovery Time  
1N4942-4944  
1N4946-4947  
1N4948  
VF  
IR  
1.3V  
IFM = 1.0A;  
TA = 25°C*  
5.0mA  
500mA  
TJ = 25°C  
TJ = 175°C  
DIMENSIONS  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
4.10  
2.00  
.70  
Trr  
CJ  
150ns  
250ns  
500ns  
15pF  
IF=0.5A,  
1.000  
25.40  
---  
IR=1.0A,  
Irr=0.25A  
Measured at  
1.0MHz,  
VR=4.0V  
Typical Junction  
Capacitance  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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