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1N4917E3 PDF预览

1N4917E3

更新时间: 2024-11-23 14:39:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 300K
描述
Zener Diode, 19.2V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACAKGE-2

1N4917E3 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.74
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.5 W标称参考电压:19.2 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
电压温度Coeff-Max:0.96 mV/ °C最大电压容差:5%
Base Number Matches:1

1N4917E3 数据手册

 浏览型号1N4917E3的Datasheet PDF文件第2页 
• 19.2 VOLT NOMINAL ZENER VOLTAGE + 5%  
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES  
• LOW NOISE  
1N4916  
thru  
1N4932A  
• METALLURGICALLY BONDED  
• DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
DC Power Dissipation: 500mW @ +50°C  
Power Derating: 4 mW / °C above +50°C  
REVERSE LEAKAGE CURRENT  
lR = 15 µA @ 25°C & VR = 12Vdc  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.  
JEDEC  
TYPE  
NUMBER  
VOLTAGE  
TEMPERATURE  
STABILITY  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
MAXIMUM  
DYNAMIC  
IMPEDANCE  
MAXIMUM  
NOISE  
DENSITY  
TEST  
CURRENT  
TEMPERATURE  
RANGE  
l
³V  
(Note 2)  
Z
N
ZT  
ZT  
ZT  
D
(Note 3)  
(Note 1)  
mA  
mV  
°C  
%/°C  
OHMS  
µ V Hz  
1N4916  
1N4916A  
1N4917  
0.5  
0.5  
0.5  
0.5  
144  
298  
72  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.01  
0.01  
0.005  
0.005  
600  
600  
600  
600  
1.0  
1.0  
1.0  
1.0  
1N4917A  
149  
1N4918  
1N4918A  
1N4919  
0.5  
0.5  
1.0  
1.0  
29  
60  
144  
298  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.002  
0.002  
0.01  
600  
600  
300  
300  
1.0  
1.0  
0.5  
0.5  
1N4919A  
0.01  
1N4920  
1N4920A  
1N4921  
1.0  
1.0  
1.0  
1.0  
72  
149  
29  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.005  
0.005  
0.002  
0.002  
300  
300  
300  
300  
0.5  
0.5  
0.5  
0.5  
1N4921A  
60  
FIGURE 1  
1N4922  
1N4922A  
1N4923  
2.0  
2.0  
2.0  
2.0  
144  
298  
72  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.01  
0.01  
0.005  
0.005  
150  
150  
150  
150  
0.25  
0.25  
0.25  
0.25  
1N4923A  
149  
1N4924  
1N4924A  
1N4925  
2.0  
2.0  
4.0  
4.0  
29  
60  
144  
298  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.002  
0.002  
0.01  
150  
150  
75  
0.25  
0.25  
0.22  
0.22  
DESIGN DATA  
1N4925A  
0.01  
75  
1N4926  
1N4926A  
1N4927  
4.0  
4.0  
4.0  
4.0  
72  
149  
29  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.005  
0.005  
0.002  
0.002  
75  
75  
75  
75  
0.22  
0.22  
0.22  
0.22  
CASE: Hermetically sealed glass  
case. DO – 35 outline.  
1N4927A  
60  
1N4928  
1N4928A  
1N4929  
4.0  
4.0  
7.5  
7.5  
14  
30  
144  
298  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.001  
0.001  
0.01  
75  
75  
36  
36  
0.22  
0.22  
0.20  
0.20  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
1N4929A  
0.01  
1N4930  
1N4930A  
1N4931  
7.5  
7.5  
7.5  
7.5  
72  
149  
29  
+25 to +100  
-55 to +100  
+25 to +100  
-55 to +100  
0.005  
0.005  
0.002  
0.002  
36  
36  
36  
36  
0.20  
0.20  
0.20  
0.20  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
1N4931A  
60  
1N4932  
1N4932A  
7.5  
7.5  
14  
30  
+25 to +100  
-55 to +100  
0.001  
0.001  
36  
36  
0.20  
0.20  
MOUNTING POSITION: Any.  
NOTE 1 Zener impedance is derived by superimposing on l  
A 60Hz rms a.c. current  
ZT  
equal to 10% of l  
.
ZT  
NOTE 2 The maximum allowable change observed over the entire temperature range  
i.e.,the diode voltage will not exceed the speci½ed mV at any discrete  
temperature between the established limits, per JEDEC standard No.5.  
NOTE 3 Zener voltage range equals 19.2 volts + 5%.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
55  

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