1N4750

更新时间： 2024-09-17 22:37:35

品牌	Logo	应用领域
EIC		稳压二极管
页数	文件大小	规格书
2页	31K
描述
SILICON ZENER DIODES

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中文翻译

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数据手册

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1N4750 数据手册

SILICON ZENER DIODES

1N4728 - 1N4764

Z1110 - Z1200

DO - 41

V : 3.3 - 200 Volts

P : 1 Watt

1.00 (25.4)

FEATURES :

0.107 (2.7)

MIN.

* Complete voltage range 3.3 to 200 Volts

0.080 (2.0)

* High peak reverse power dissipation

* High reliability

* Low leakage current

0.205 (5.2)

0.166 (4.2)

MECHANICAL DATA

1.00 (25.4)

0.034 (0.86)

MIN.

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

0.028 (0.71)

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.339 gram

MAXIMUM RATINGS

Rating at 25 C ambient temperature unless otherw ise specified

Rating

Symbol

Value

Unit

DC Power Dissipation at T_L= 50 C (Note1)

P_D

1.0

Watt

Maximum Forward Voltage at I_F= 200 mA

Maximum Thermal Resistance Junction to Ambient Air (Note2)

Junction Temperature Range

V_F

1.2

Volts

K / W

R JA

170

T_J

- 55 to + 175

Storage Temperature Range

Note :

(1) TL = Lead temperature at 3/8 " (9.5mm) from body

(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.

Fig. 1 POWER TEMPERATURE DERATING CURVE

1.25

1.00

0.75

0.50

L = 3/8" (9.5mm)

0.25

100

125

150

175

TL, LEAD TEMPERATURE ( C)

UPDATE : SEPTEMBER 9, 2000

中文翻译

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