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1N4750A PDF预览

1N4750A

更新时间: 2024-11-20 07:21:39
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管测试
页数 文件大小 规格书
5页 355K
描述
SILICON ZENER DIODE

1N4750A 数据手册

 浏览型号1N4750A的Datasheet PDF文件第2页浏览型号1N4750A的Datasheet PDF文件第3页浏览型号1N4750A的Datasheet PDF文件第4页浏览型号1N4750A的Datasheet PDF文件第5页 
1N4736A~1N4757A  
SILICON ZENER DIODE  
Unit: inch(mm)  
DO-41  
6.8 to 51 Volts  
VOLTAGE  
FEATURES  
POWER  
1.0 Watts  
• Low profile package  
• Built-in strain relief  
• Low inductance  
.034(.86)  
.028(.71)  
• High temperature soldering : 260°C /10 seconds at terminals  
• Plastic package has Underwriters Laboratory Flammability  
Classification 94V-O  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: Molded plastic DO-41  
• Epoxy:UL 94V-O rate flame retardant  
.107(2.7)  
.080(2.0)  
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026  
guaranteed  
• Polarity: Color band denotes positive end  
• Mounting position:Any  
• Weight: 0.012 ounce, 0.3 gram  
• Packing information  
B
- 1K per Bulk box  
T/R - 5K per 13" paper Reel  
T/B - 2.5K per horiz. tape & Ammo box  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
1*  
Units  
W
Power Dissipation at Tamb = 25 OC  
P
TOT  
Junction Temperature  
-55 to + 150  
-55 to + 150  
OC  
OC  
T
J
Storage Temperature Range  
TSTG  
*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.  
STAD-JUN.15.2009  
2
PAGE . 1  

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